2SD1117 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor 2SD1117 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Wide.

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Datasheet Specifications

Part number: 2SD1117
Manufacturer: Inchange Semiconductor
File Size: 208.53 KB
Datasheet: 2SD1117_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for audio amplifier, series regulators and general purpose power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuou

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2SD1117 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD1117-like datasheet