Datasheet4U Logo Datasheet4U.com

2SD1114 - NPN Transistor

2SD1114 Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1114 .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min). High DC Current Gain : hFE= 500(Min) @IC= 4A. 100% avalanche tested. Mi.

2SD1114 Applications

* Solenoid/ relay drivers
* Motor control
* Electronic automotive ignition ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6

📥 Download Datasheet

Preview of 2SD1114 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SD1114
Manufacturer
INCHANGE
File Size
182.97 KB
Datasheet
2SD1114-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SD1111 - NPN TRANSISTOR (Sanyo Semicon Device)
  • 2SD1113 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • 2SD1113K - NPN TRANSISTOR (Hitachi Semiconductor)
  • 2SD1115K - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD1117 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • 2SD1118 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • 2SD1119 - NPN TRANSISTOR (Panasonic Semiconductor)
  • 2SD110 - Silicon NPN Power Transistor (Inchange Semiconductor Company)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SD1114-like datasheet