Part number: 2SD1114
Manufacturer: INCHANGE
File Size: 182.97KB
Download: 📄 Datasheet
Description: NPN Transistor
*Solenoid/ relay drivers
*Motor control
*Electronic automotive ignition
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
S.
*Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min)
*High DC Current Gain
: hFE= 500(Min) @IC= 4A
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*.
Image gallery
TAGS
📁 Related Datasheet
2SD111 - Silicon NPN Power Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Power Dissipation-
: PC= 100W@TC= 25℃ ·High Current Capability-
: IC = 10A ·Minimum Lot-to-Lot var.
2SD1110 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
2SD1110
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement .
2SD1110 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1110
www.datasheet4u.com
DESCRIPTION ·With TO-3PFa package ·Complem.
2SD1111 - NPN TRANSISTOR
(Sanyo Semicon Device)
Ordering number:EN751C
NPN Epitaxial Planar Silicon Darlington Transistor
2SD1111
Driver Applications
Applications
· Motor drivers, printer hammer d.
2SD1113 - Silicon NPN Power Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1113
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V(Min.
2SD1113 - NPN TRANSISTOR
(Hitachi Semiconductor)
2SD1113(K)
Silicon NPN Triple Diffused
Application
Igniter
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter
1
2 3
6 kΩ (Typ)
450 .
2SD1113 - Silicon NPN Transistor
(Renesas)
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
Th.
2SD1113K - NPN TRANSISTOR
(Hitachi Semiconductor)
2SD1113(K)
Silicon NPN Triple Diffused
Application
Igniter
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter
1
2 3
6 kΩ (Typ)
450 .
2SD1113K - Silicon NPN Transistor
(Renesas)
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
Th.
2SD1115 - NPN Transistor
(INCHANGE)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V(Min) ·High DC Current Gain
: hFE= 50.
