2SD1114 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1114 .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min). High DC Current Gain : hFE= 500(Min) @IC= 4A. 100% avalanche tested. Mi.

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Datasheet Specifications

Part number: 2SD1114
Manufacturer: INCHANGE
File Size: 182.97 KB
Datasheet: 2SD1114-INCHANGE.pdf
Description: NPN Transistor

Applications

* Solenoid/ relay drivers
* Motor control
* Electronic automotive ignition ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6

2SD1114 Distributors

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2SD1114 NPN Transistor INCHANGE

INCHANGE 2SD1114-like datasheet