Datasheet4U Logo Datasheet4U.com

2SD1124 - NPN Transistor

2SD1124 Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1124 .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min). High DC Current Gain : hFE= 1000(Min) @IC= 1A. 100% avalanche tested. Mi.

2SD1124 Applications

* Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A I

📥 Download Datasheet

Preview of 2SD1124 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SD1124
Manufacturer
INCHANGE
File Size
189.19 KB
Datasheet
2SD1124-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SD1126 - NPN TRANSISTOR (Hitachi Semiconductor)
  • 2SD1126K - NPN TRANSISTOR (Hitachi Semiconductor)
  • 2SD1127 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD1127K - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD110 - Silicon NPN Power Transistor (Inchange Semiconductor Company)
  • 2SD1101 - NPN TRANSISTOR (Hitachi Semiconductor)
  • 2SD1105 - Silicon NPN Power Transistor (Inchange Semiconductor Company)
  • 2SD1111 - NPN TRANSISTOR (Sanyo Semicon Device)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SD1124-like datasheet