2SD1124 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1124 .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min). High DC Current Gain : hFE= 1000(Min) @IC= 1A. 100% avalanche tested. Mi.

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Datasheet Specifications

Part number: 2SD1124
Manufacturer: INCHANGE
File Size: 189.19 KB
Datasheet: 2SD1124-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A I

2SD1124 Distributors

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2SD1124 NPN Transistor INCHANGE

INCHANGE 2SD1124-like datasheet