2SD113 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min). High Power Dissipation. High Current Capability. Minimum Lot-to-Lot varia.

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Datasheet Specifications

Part number: 2SD113
Manufacturer: INCHANGE
File Size: 210.64 KB
Datasheet: 2SD113-INCHANGE.pdf
Description: NPN Transistor

Applications

* Audio power amplifier, power switching applications.
* DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 10 V IC Collector C

2SD113 Distributors

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2SD113 NPN Transistor INCHANGE

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