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2SD113 - NPN Transistor

2SD113 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min). High Power Dissipation. High Current Capability. Minimum Lot-to-Lot varia.

2SD113 Applications

* Audio power amplifier, power switching applications.
* DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 10 V IC Collector C

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Datasheet Details

Part number
2SD113
Manufacturer
INCHANGE
File Size
210.64 KB
Datasheet
2SD113-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD113-like datasheet