2SD111 Silicon NPN Power Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
High Power Dissipation- : PC= 100W@TC= 25℃. High Current Capability- : IC = 10A. Minimum Lot-to-Lot variations for robust device performa.

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Datasheet Specifications

Part number: 2SD111
Manufacturer: INCHANGE
File Size: 207.95 KB
Datasheet: 2SD111-INCHANGE.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for power amplifier , power switching ,DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 10 V IC Collector Current-C

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2SD111 Silicon NPN Power Transistor INCHANGE

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