2SD1115 - NPN Transistor
(INCHANGE)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V(Min) ·High DC Current Gain
: hFE= 50.
2SD1115 - Silicon NPN Transistor
(Hitachi Semiconductor)
2SD1115(K)
Silicon NPN Triple Diffused
..
Application
High voltage switching, igniter
Outline
TO-220AB
2
1 1. Base 2. Collector .
2SD1115K - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1115K
..
DESCRIPTION ·With TO-220 package ·DARLING.
2SD111 - Silicon NPN Power Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Power Dissipation-
: PC= 100W@TC= 25℃ ·High Current Capability-
: IC = 10A ·Minimum Lot-to-Lot var.
2SD1110 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
2SD1110
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement .
2SD1110 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1110
..
DESCRIPTION ·With TO-3PFa package ·Complem.
2SD1111 - NPN TRANSISTOR
(Sanyo Semicon Device)
Ordering number:EN751C
NPN Epitaxial Planar Silicon Darlington Transistor
2SD1111
Driver Applications
Applications
· Motor drivers, printer hammer d.
2SD1113 - Silicon NPN Power Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1113
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V(Min.