2SD1113 Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1113 .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min). High DC Current Gain : hFE= 500(Min) @IC= 4A. Minimum Lot-to-Lot variations.

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Datasheet Specifications

Part number: 2SD1113
Manufacturer: Inchange Semiconductor
File Size: 211.37 KB
Datasheet: 2SD1113-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Igniter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=2

2SD1113 Distributors

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2SD1113 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD1113-like datasheet