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2SD1113 - Silicon NPN Power Transistor

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Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) High DC Current Gain : hFE= 500(Min) @IC= 4A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Igniter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCB

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Part number 2SD1113
Manufacturer Inchange Semiconductor
File Size 211.37 KB
Description Silicon NPN Power Transistor
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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1113 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) ·High DC Current Gain : hFE= 500(Min) @IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Igniter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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