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2SD1113 Datasheet - Inchange Semiconductor

Silicon NPN Power Transistor

2SD1113 General Description

*Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) *High DC Current Gain : hFE= 500(Min) @IC= 4A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Igniter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCB.

2SD1113 Datasheet (211.37 KB)

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Datasheet Details

Part number:

2SD1113

Manufacturer:

Inchange Semiconductor

File Size:

211.37 KB

Description:

Silicon npn power transistor.

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2SD1113 Silicon NPN Power Transistor Inchange Semiconductor

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