Part number:
2SD1119
Manufacturer:
Panasonic Semiconductor
File Size:
38.63 KB
Description:
Npn transistor.
* 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 q q q Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the
2SD1119
Panasonic Semiconductor
38.63 KB
Npn transistor.
📁 Related Datasheet
2SD111 - Silicon NPN Power Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Power Dissipation-
: PC= 100W@TC= 25℃ ·High Current Capability-
: IC = 10A ·Minimum Lot-to-Lot var.
2SD1110 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
2SD1110
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement .
2SD1110 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1110
..
DESCRIPTION ·With TO-3PFa package ·Complem.
2SD1111 - NPN TRANSISTOR
(Sanyo Semicon Device)
Ordering number:EN751C
NPN Epitaxial Planar Silicon Darlington Transistor
2SD1111
Driver Applications
Applications
· Motor drivers, printer hammer d.
2SD1113 - Silicon NPN Power Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1113
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V(Min.
2SD1113 - NPN TRANSISTOR
(Hitachi Semiconductor)
2SD1113(K)
Silicon NPN Triple Diffused
Application
Igniter
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter
1
2 3
6 kΩ (Typ)
450 .
2SD1113 - Silicon NPN Transistor
(Renesas)
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
Th.
2SD1113K - NPN TRANSISTOR
(Hitachi Semiconductor)
2SD1113(K)
Silicon NPN Triple Diffused
Application
Igniter
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter
1
2 3
6 kΩ (Typ)
450 .
