2SD1110 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 2SD1110 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Good Linearity of hFE. Complement to Type 2SB849. Minimum Lot-to-Lot vari.

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Datasheet Specifications

Part number: 2SD1110
Manufacturer: INCHANGE
File Size: 213.70 KB
Datasheet: 2SD1110-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICP Collector C

2SD1110 Distributors

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2SD1110 NPN Transistor INCHANGE

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