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2SD1111 - NPN TRANSISTOR

Sanyo Semicon Device

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Datasheet Details

Part number	2SD1111
Manufacturer	Sanyo Semicon Device
File Size	76.03 KB
Description	NPN TRANSISTOR
Datasheet	2SD1111_SanyoSemiconDevice.pdf

2SD1111 Product details

Features

High DC Current Gain (5000 or greater).
Large current capacity and wide ASO.
Low saturation voltage (VCE(sat)=0.8V typ). Package Dimensions unit:mm 2003B [2SD1111] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCE.

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Published: Apr 3, 2005 |