2SD1127 Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor 2SD1127 .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min). High DC Current Gain : hFE= 1000(Min) @IC= 10A. Low Saturation Voltage.

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Datasheet Specifications

Part number: 2SD1127
Manufacturer: Inchange Semiconductor
File Size: 208.28 KB
Datasheet: 2SD1127_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICP Collector Current-Peak PC

2SD1127 Distributors

📁 Related Datasheet

2SD1127K 2SD1124 2SD1126 2SD1126K 2SD1128 2SD110

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2SD1127 Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD1127-like datasheet