2SD1127

Power Transistor

Inchange Semiconductor

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2SD1127

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Inchange Semiconductor

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Description:

Power transistor.
isc Silicon NPN Darlington Power Transistor 2SD1127 DESCRIPTION *Collector-Emitter Sustaining Volt.
*Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) *High DC Current Gain : hFE= 1000(Min).

✔ 2SD1127 Application

Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI

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2SD1127 Power Transistor Inchange Semiconductor

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✔ 2SD1127 Application

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