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2SD1141 - Power Transistor

2SD1141 Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min). High DC Current Gain : hFE= 500(Min)@IC= 4A. Minimum Lot-to-Lot variations.

2SD1141 Applications

* Designed for high voltage switching, igniter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector C

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Power Transistor Inchange Semiconductor
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