2SD1140 Datasheet - Toshiba Semiconductor

2SD1140, NPN TRANSISTOR

2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1140 Micro Motor Drive, Hammer Drive Application.

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2SD1140_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SD1140

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

117.15 KB

Description:

NPN TRANSISTOR

Applications

* Switching Applications Power Amplifier Applications Unit: mm
* High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)
* Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter volt

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2SD1140 NPN TRANSISTOR Toshiba Semiconductor

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