2SD1140 Datasheet - Toshiba Semiconductor

2SD1140 NPN TRANSISTOR

2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1140 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base .

2SD1140_ToshibaSemiconductor.pdf