2SD114 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 25-100@IC= 7.5A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variati.
2SD1141 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V(Min) ·High DC Current Gain
: hFE= 50.
2SD1142 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1142
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·Collector-Emitter Saturati.
2SD1143 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1143
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·Collector-Emitter Saturati.
2SD1145 - NPN TRANSISTOR
(Sanyo Semicon Device)
Ordering number:EN784E
NPN Epitaxial Planar Silicon Transistor
..
2SD1145
High-Current Driver Applications
Applications
· Relay dr.
2SD1148 - NPN Transistor
(Toshiba)
:
2SD1148
T
SILICON NPN TRIPLE DIFFUSED TYPE
POWER AMPLIFIER APPLICATIONS.
FEATURES . Complementary to 2SB863. . Remend for 70W High Fidelity Aud.
2SD1148 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1148
..
DESCRIPTION ·With TO-3P(I) package ·Comple.
2SD1148 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·Complement to Type 2.