2SD1220 Datasheet - Toshiba Semiconductor

2SD1220 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SD1220 2SD1220 Power Amplifier Applications Unit: mm Complementary to 2SB905 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C VCBO VCEO VEBO IC IB PC 150 V 150 V 6V 1.5 A 1.0 A 1.0 W 10 Junction temperature Tj 150 °C Storage temperature.

2SD1220 Features

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2SD1220_ToshibaSemiconductor.pdf