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2SD1220 Silicon NPN Transistor

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Description

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SD1220 2SD1220 Power Amplifier Applications Unit: mm * Complementary to 2SB90.

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Features

* mitation, the EU RoHS Directive. TOSHIBA assumes no liability for d

Applications

* Unit: mm
* Complementary to 2SB905 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C VCBO VCEO VEBO IC IB

2SD1220 Distributors

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