2SD1221 Datasheet - Toshiba Semiconductor

2SD1221 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Diffused Type (PCT Process) 2SD1221 2SD1221 Audio Frequency Power Amplifier Application Unit: mm Low collector saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A) High power dissipation: PC = 20 W (Tc = 25°C) Complementary to 2SB906 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V Co.

2SD1221_ToshibaSemiconductor.pdf