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2SD1143 - NPN Transistor

2SD1143 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1143 .
High Breakdown Voltage- : VCBO= 1500V (Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 5. Built-in Damper Diode.

2SD1143 Applications

* Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 5 A ICP Collector Cu

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Datasheet Details

Part number
2SD1143
Manufacturer
INCHANGE
File Size
197.34 KB
Datasheet
2SD1143-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1143-like datasheet