2SD1143 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1143 .
High Breakdown Voltage- : VCBO= 1500V (Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 5. Built-in Damper Diode.

📥 Download Datasheet

2SD1143 Datasheet Preview — Preview of 2SD1143 PDF

Datasheet Specifications

Part number: 2SD1143
Manufacturer: INCHANGE
File Size: 197.34 KB
Datasheet: 2SD1143-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 5 A ICP Collector Cu

2SD1143 Distributors

📁 Related Datasheet

2SD1140 2SD1141 2SD1145 2SD1148 2SD1149 2SD110

📌 All Tags

2SD1143 NPN Transistor INCHANGE

INCHANGE 2SD1143-like datasheet