2SD1142 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1142 .
High Breakdown Voltage- : VCBO= 1500V (Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 4. Built-in Damper Diod.

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Datasheet Specifications

Part number: 2SD1142
Manufacturer: INCHANGE
File Size: 197.01 KB
Datasheet: 2SD1142-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 3.5 A ICP Collector

2SD1142 Distributors

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2SD1142 NPN Transistor INCHANGE

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