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2SD1142 - NPN Transistor

2SD1142 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1142 .
High Breakdown Voltage- : VCBO= 1500V (Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 4. Built-in Damper Diod.

2SD1142 Applications

* Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 3.5 A ICP Collector

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Datasheet Details

Part number
2SD1142
Manufacturer
INCHANGE
File Size
197.01 KB
Datasheet
2SD1142-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1142-like datasheet