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2SD1142 - NPN Transistor

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Part number 2SD1142
Manufacturer INCHANGE
File Size 197.01 KB
Description NPN Transistor
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Description

High Breakdown Voltage- : VCBO= 1500V (Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 4.0V(Max.)@ IC= 2.5A Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications.

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