2SD1142 - NPN Transistor
*High Breakdown Voltage- : VCBO= 1500V (Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 4.0V(Max.)@ IC= 2.5A *Built-in Damper Diode *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for horizontal deflection output
