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2SD114 - NPN Transistor

2SD114 Description

isc Silicon NPN Power Transistor .
High DC Current Gain- : hFE= 25-100@IC= 7. Excellent Safe Operating Area. Minimum Lot-to-Lot variations for robust device performance.

2SD114 Applications

* Designed for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 4 V IC Coll

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Datasheet Details

Part number
2SD114
Manufacturer
INCHANGE
File Size
200.68 KB
Datasheet
2SD114-INCHANGE.pdf
Description
NPN Transistor

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INCHANGE 2SD114-like datasheet