2SD1105 Silicon NPN Power Transistor

Inchange Semiconductor Company

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min). Wide Area of Safe Operation. High Power and High Reliability. Minimum Lot.

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Datasheet Specifications

Part number: 2SD1105
Manufacturer: Inchange Semiconductor Company
File Size: 207.33 KB
Datasheet: 2SD1105_InchangeSemiconductorCompany.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for high power AF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB Base Current-Continuou

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2SD1105 Silicon NPN Power Transistor Inchange Semiconductor Company

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