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2SD1770 Datasheet - Inchange Semiconductor Company

2SD1770 - Silicon NPN Darlington Power Transistor

*High Power Dissipation *High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) *Complement to Type 2SB1190 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Power amplifier applications. *TV vertical deflection output.

2SD1770_InchangeSemiconductorCompany.pdf

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Part number:

2SD1770

Manufacturer:

Inchange Semiconductor Company

File Size:

213.46 KB

Description:

Silicon npn darlington power transistor.

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2SD1770 Silicon NPN Darlington Power Transistor Inchange Semiconductor Company