2SD1770 Silicon NPN Darlington Power Transistor

Inchange Semiconductor Company

Description

isc Silicon NPN Power Transistor .
High Power Dissipation. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min. Complement to Type 2SB1190. Minimum Lot-to-.

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Datasheet Specifications

Part number: 2SD1770
Manufacturer: Inchange Semiconductor Company
File Size: 213.46 KB
Datasheet: 2SD1770_InchangeSemiconductorCompany.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Power amplifier applications.
* TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1 A

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2SD1770 Silicon NPN Darlington Power Transistor Inchange Semiconductor Company

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