2SD1603 - Silicon NPN Darlington Power Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) High DC Current Gain : hFE= 1000(Min) @IC= 4A Complement to Type 2SB1103 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers appl

Inchange Semiconductor Company

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Datasheet Details

Part number	2SD1603
Manufacturer	Inchange Semiconductor Company
File Size	211.12 KB
Description	Silicon NPN Darlington Power Transistor
Datasheet	2SD1603 Datasheet
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isc Silicon NPN Darlington Power Transistor 2SD1603 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 4A ·Complement to Type 2SB1103 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.

Published: Sep 22, 2009 |