2SD1603 Silicon NPN Darlington Power Transistor

Inchange Semiconductor Company

Description

isc Silicon NPN Darlington Power Transistor 2SD1603 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). High DC Current Gain : hFE= 1000(Min) @IC= 4A. Complement to Type 2SB1103.

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Datasheet Specifications

Part number: 2SD1603
Manufacturer: Inchange Semiconductor Company
File Size: 211.12 KB
Datasheet: 2SD1603_InchangeSemiconductorCompany.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector Curr

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2SD1603 Silicon NPN Darlington Power Transistor Inchange Semiconductor Company

Inchange Semiconductor Company 2SD1603-like datasheet