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2SD1608 - Power Transistor

Datasheet Summary

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) High DC Current Gain : hFE= 1000(Min) @IC= 4A High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium speed power switching applicati

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Datasheet Details

Part number 2SD1608
Manufacturer Inchange Semiconductor
File Size 212.79 KB
Description Power Transistor
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isc Silicon NPN Darlington Power Transistor 2SD1608 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 4A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 2 W 50 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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