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2SD1600 - NPN Transistor

2SD1600 Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1600 .
High DC Current Gain- : hFE = 1000(Min)@ IC= 4A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min). Low Collector-Emitter Satu.

2SD1600 Applications

* Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous ICM Co

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Datasheet Details

Part number
2SD1600
Manufacturer
INCHANGE
File Size
185.15 KB
Datasheet
2SD1600-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1600-like datasheet