2SD1601, Inchange Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1601
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·High DC Current Gain
: h.
2SD1602, Inchange Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1602
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·High DC Current Gain
: h.
2SD1603, Inchange Semiconductor Company
isc Silicon NPN Darlington Power Transistor
2SD1603
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·High DC Current Gain
: h.
2SD1604, Inchange Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1604
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·High DC Current Gain
: h.