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2SD1606 - Silicon NPN Transistor

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Part number 2SD1606
Manufacturer Hitachi Semiconductor
File Size 35.45 KB
Description Silicon NPN Transistor
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2SD1606 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 2.6 kΩ (Typ) 160 Ω (Typ) 3 1 2 3 2SD1606 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg ID* 1 1 Ratings 120 120 7 6 12 40 150 –55 to +150 6 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Symbol Min 120 7 — — 1000 — — — — — — — — Typ — — — — — — — — — — 0.6 7.0 2.0 Max — — 100 10 20000 1.5 3.0 2.0 3.5 3.
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