2SD1607 - NPN Transistor

Datasheet Summary

Description

High DC Current Gain- : hFE = 1000(Min)@ IC= 5A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 120V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

INCHANGE

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Datasheet Details

Part number	2SD1607
Manufacturer	INCHANGE
File Size	183.15 KB
Description	NPN Transistor
Datasheet	2SD1607 Datasheet
Additional preview pages of the 2SD1607 datasheet.

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1607 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.

Published: Sep 30, 2020 |