2SD1607 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1607 .
High DC Current Gain- : hFE = 1000(Min)@ IC= 5A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 120V(Min). Low Collector-Emitter Sat.

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Datasheet Specifications

Part number: 2SD1607
Manufacturer: INCHANGE
File Size: 183.15 KB
Datasheet: 2SD1607-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A

2SD1607 Distributors

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2SD1607 NPN Transistor INCHANGE

INCHANGE 2SD1607-like datasheet