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2SD1633 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) High DC Current Gain : hFE= 1500(Min) @IC= 3A High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for power switching applications.

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Datasheet Details

Part number 2SD1633
Manufacturer INCHANGE
File Size 212.32 KB
Description NPN Transistor
Datasheet download datasheet 2SD1633 Datasheet
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isc Silicon NPN Darlington Power Transistor 2SD1633 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 3A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak 8 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
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