2SD1638 - NPN Transistor
*High DC Current Gain- : hFE = 1000(Min)@ IC= 1A *Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min) *Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
