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2SD1638 - NPN Transistor

2SD1638 Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain- : hFE = 1000(Min)@ IC= 1A. Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min). Low Collector-Emitter Satur.

2SD1638 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICM Collector Cur

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Datasheet Details

Part number
2SD1638
Manufacturer
INCHANGE
File Size
204.09 KB
Datasheet
2SD1638-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1638-like datasheet