2SD1619 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1619 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 25V (Min). Complement to Type 2SB1119. 100% avalanche tested. Minimum Lot-to-Lot var.

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Datasheet Specifications

Part number: 2SD1619
Manufacturer: INCHANGE
File Size: 208.60 KB
Datasheet: 2SD1619-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for LF Amp Electronic Governor applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Pe

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2SD1619 NPN Transistor INCHANGE

INCHANGE 2SD1619-like datasheet