Datasheet4U Logo Datasheet4U.com

2SD1619 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 25V (Min) Complement to Type 2SB1119 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for LF Amp Electronic Governor applications.

📥 Download Datasheet

Datasheet preview – 2SD1619

Datasheet Details

Part number 2SD1619
Manufacturer INCHANGE
File Size 208.60 KB
Description NPN Transistor
Datasheet download datasheet 2SD1619 Datasheet
Additional preview pages of the 2SD1619 datasheet.

📁 Similar Datasheet

  • 2SD1619 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SD1619 - Silicon NPN Power Transistor (SavantIC)
  • 2SD1619 - PNP Silicon Medium Power Transistor (SeCoS)
  • 2SD1610 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD1611 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD1614 - NPN Transistor (NEC)
  • 2SD1615 - NPN Transistor (NEC)
  • 2SD1615 - NPN Silicon Transistor (Guangdong Kexin Industrial)
  • 2SD1615A - NPN Transistor (NEC)
  • 2SD1616 - NPN Transistor (Unisonic Technologies)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1619 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 25V (Min) ·Complement to Type 2SB1119 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for LF Amp Electronic Governor applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature 2 A 0.5 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
Published: |