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2SD1619 - NPN Transistor

2SD1619 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1619 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 25V (Min). Complement to Type 2SB1119. 100% avalanche tested. Minimum Lot-to-Lot var.

2SD1619 Applications

* Designed for LF Amp Electronic Governor applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Pe

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Datasheet Details

Part number
2SD1619
Manufacturer
INCHANGE
File Size
208.60 KB
Datasheet
2SD1619-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1619-like datasheet