* q q q 1.5max. 1.1max. High foward current transfer ratio hFE High collector to base voltage VCBO N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.5min. 2.0 0.8±0.1 0.5max. 2.54±0.3 5.08±0.5 1 2 3 s Absolute Ma
2SD1611
Panasonic Semiconductor
64.21 KB
Silicon npn transistor.
Power Transistors
2SD1611
Silicon NPN triple diffusion planar type Darlington
For power amplification
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.5 3.4±0.3
Unit:.
📁 Related Datasheet
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Application
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Outline
TO-126 M.
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.
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DATA SHEET
SILICON TRANSISTORS
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..
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(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD
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NPN EPITAXIAL SILICON TRANSISTOR
DESCRIPTION
* Audio frequency power amplifier *.
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(NEC)
DATA SHEET
SILICON TRANSISTORS
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NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
FEATUR.
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(Weitron Technology)
..
2SD1616 2SD1616A
NPN Transistors
TO-92
1. EMITTER 2. COLLECTOR 3. BASE
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Colle.
