2SD1640 Datasheet - Panasonic Semiconductor

2SD1640 Silicon NPN Transistor

Power Transistors www.DataSheet4U.com 2SD1640 Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency output amplification φ 3.16±0.1 8.0+0.5 0.1 3.2±0.2 3.8±0.3 1.9±0.1 High forward current transfer ratio hFE Large peak collector current ICP High collector-emitter voltage (Base open) VCEO Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltag.

2SD1640 Features

* 11.0±0.5 Unit V V V µA µA  V V 0.1 1 4 000 40 000 1.5 2.0 Collector-emitter saturation voltage

* 1 Base-emitter saturation voltage

* 1 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2.

* 1: Pulse measurement

* 2: R

2SD1640 Datasheet (111.84 KB)