* 11.0±0.5 Unit V V V µA µA V V 0.1 1 4 000 40 000 1.5 2.0 Collector-emitter saturation voltage
* 1 Base-emitter saturation voltage
* 1 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2.
* 1: Pulse measurement
* 2: R
2SD1640
Panasonic Semiconductor
111.84 KB
Silicon npn transistor.
Power Transistors www.DataSheet4U.com 2SD1640 Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency output amplification φ 3.16±0..
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