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2SD1601 - Power Transistor

2SD1601 Description

isc Silicon NPN Darlington Power Transistor 2SD1601 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). High DC Current Gain : hFE= 1000(Min) @IC= 2A. Complement to Type 2SB1101.

2SD1601 Applications

* Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICP Collector Curr

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Power Transistor Inchange Semiconductor
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