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2SD1601 Datasheet - Inchange Semiconductor

2SD1601 Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) *High DC Current Gain : hFE= 1000(Min) @IC= 2A *Complement to Type 2SB1101 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for low frequency power amplifiers appl.

2SD1601_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD1601

Manufacturer:

Inchange Semiconductor

File Size:

210.87 KB

Description:

Power transistor.

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2SD1601 2SD1601 Power Transistor Inchange Semiconductor

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