2SD1601 Datasheet - Inchange Semiconductor

2SD1601, Power Transistor

isc Silicon NPN Darlington Power Transistor 2SD1601 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). High DC Current Gain : hFE= 1000(Min) @IC= 2A. Complement to Type 2SB1101.

datasheet Preview Page 1 from Datasheet4u.com

2SD1601_InchangeSemiconductor.pdf

2SD1601 Datasheet Preview — Preview of 2SD1601 PDF

Datasheet Details

Part number:

2SD1601

Manufacturer:

Inchange Semiconductor

File Size:

210.87 KB

Description:

Power Transistor

Applications

* Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICP Collector Curr

2SD1601 Distributors

📁 Related Datasheet

2SD1600 2SD1603 2SD1604 2SD1606 2SD1607 2SD1609

📌 All Tags

2SD1601 Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD1601-like datasheet