2SD1601 Datasheet, Transistor, Inchange Semiconductor

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2SD1601

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Inchange Semiconductor

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📄 Datasheet

Description:

Power transistor.

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min)

High DC Current Gain : hFE= 1000(Min) @IC= 2A

Co

2SD1601 Application

• Applications
• Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V

TAGS

2SD1601

Inchange Semiconductor

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