2SD1609 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1609 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min). Good Linearity of hFE. 100% avalanche tested. Complement to Type 2SB.

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Datasheet Specifications

Part number: 2SD1609
Manufacturer: INCHANGE
File Size: 189.44 KB
Datasheet: 2SD1609-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for low frequency and high-voltage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 160 UNIT V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.1 A Collec

2SD1609 Distributors

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2SD1609 NPN Transistor INCHANGE

INCHANGE 2SD1609-like datasheet