2SD1609 Datasheet, Transistor, INCHANGE

PDF File Details

Part number:

2SD1609

Manufacturer:

INCHANGE

File Size:

189.44kb

Download:

📄 Datasheet

Description:

Npn transistor.

  • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min)
  • Good Linearity of hFE
  • 100% avalanche teste

  • Datasheet Preview: 2SD1609 📥 Download PDF (189.44kb)
    Page 2 of 2SD1609 Page 3 of 2SD1609

    2SD1609 Application

    • Applications
    • Designed for low frequency and high-voltage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALU

    TAGS

    2SD1609
    NPN
    Transistor
    INCHANGE

    📁 Related Datasheet

    2SD1600 - NPN Transistor (INCHANGE)
    INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1600 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 4A ·Collector-.

    2SD1601 - Power Transistor (Inchange Semiconductor)
    isc Silicon NPN Darlington Power Transistor 2SD1601 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : h.

    2SD1602 - Power Transistor (Inchange Semiconductor)
    isc Silicon NPN Darlington Power Transistor 2SD1602 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : h.

    2SD1603 - Silicon NPN Darlington Power Transistor (Inchange Semiconductor Company)
    isc Silicon NPN Darlington Power Transistor 2SD1603 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : h.

    2SD1603 - NPN Transistor (Hitachi Semiconductor)
    .. .. .

    2SD1604 - NPN Transistor (Hitachi Semiconductor)
    .. .. .

    2SD1604 - Power Transistor (Inchange Semiconductor)
    isc Silicon NPN Darlington Power Transistor 2SD1604 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : h.

    2SD1605 - Power Transistor (Inchange Semiconductor)
    isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000.

    2SD1606 - Silicon NPN Transistor (Hitachi Semiconductor)
    2SD1606 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 2.6.

    2SD1606 - Silicon NPN Power Transistor (Inchange Semiconductor)
    isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000.

    Stock and price

    Hitachi Ltd
    TRANSISTOR,BJT,NPN,160V V(BR)CEO,100MA I(C),TO-126
    Quest Components
    2SD1609
    461 In Stock
    Qty : 129 units
    Unit Price : $3.6
    Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts