Part number:
2SD1602
Manufacturer:
Inchange Semiconductor
File Size:
210.85 KB
Description:
Power transistor.
2SD1602
Inchange Semiconductor
210.85 KB
Power transistor.
📁 Related Datasheet
2SD1600 - NPN Transistor
(INCHANGE)
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1600
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 4A ·Collector-.
2SD1601 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor
2SD1601
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·High DC Current Gain
: h.
2SD1603 - Silicon NPN Darlington Power Transistor
(Inchange Semiconductor Company)
isc Silicon NPN Darlington Power Transistor
2SD1603
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·High DC Current Gain
: h.
2SD1603 - NPN Transistor
(Hitachi Semiconductor)
..
..
.
2SD1604 - NPN Transistor
(Hitachi Semiconductor)
..
..
.
2SD1604 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor
2SD1604
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·High DC Current Gain
: h.
2SD1605 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·High DC Current Gain
: hFE= 1000.
2SD1606 - Silicon NPN Transistor
(Hitachi Semiconductor)
2SD1606
Silicon NPN Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter ID 2.6.
