2SD1640 Datasheet - Inchange Semiconductor

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2SD1640 Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1640 .
High DC Current Gain- : hFE = 4000(Min)@ IC= 1A. Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min). Low Collector-Emitter Satur.

2SD1640-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD1640

Manufacturer:

Inchange Semiconductor

File Size:

205.62 KB

Description:

Silicon NPN Power Transistor

Applications

* Designed for low -frequency output amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Cu

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2SD1640 Silicon NPN Power Transistor Inchange Semiconductor

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