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2SD1640 Datasheet - Inchange Semiconductor

2SD1640 Silicon NPN Power Transistor

*High DC Current Gain- : hFE = 4000(Min)@ IC= 1A *Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min) *Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

2SD1640-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD1640

Manufacturer:

Inchange Semiconductor

File Size:

205.62 KB

Description:

Silicon npn power transistor.

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2SD1640 2SD1640 Silicon NPN Power Transistor Inchange Semiconductor

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