2SD1646 Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min. High DC Current Gain : hFE= 1000(Min) @IC= 1A. Low Collector Saturation Volt.

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Datasheet Specifications

Part number: 2SD1646
Manufacturer: Inchange Semiconductor
File Size: 209.53 KB
Datasheet: 2SD1646_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICP Collector Cur

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2SD1646 Power Transistor Inchange Semiconductor

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