Datasheet4U Logo Datasheet4U.com

2SD1646 Datasheet - Inchange Semiconductor

2SD1646 Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) *High DC Current Gain : hFE= 1000(Min) @IC= 1A *Low Collector Saturation Voltage *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for low frequency power amplifi.

2SD1646_InchangeSemiconductor.pdf

Preview of 2SD1646 PDF
2SD1646 Datasheet Preview Page 2

Datasheet Details

Part number:

2SD1646

Manufacturer:

Inchange Semiconductor

File Size:

209.53 KB

Description:

Power transistor.

📁 Related Datasheet

2SD1640 Silicon NPN Power Transistor (Inchange Semiconductor)

2SD1640 Silicon NPN Transistor (Panasonic Semiconductor)

2SD1641 SILICON PNP TRIPLE DIFFUSED PLANAR TYPE TRANSISTOR (Panasonic Semiconductor)

2SD1645 Silicon NPN epitaxial planar type Transistor (Panasonic Semiconductor)

2SD1647 NPN Silicon Transistor (Rohm)

2SD1647 NPN Transistor (INCHANGE)

2SD1649 NPN Transistor (INCHANGE)

2SD1649 SILICON POWER TRANSISTOR (SavantIC)

TAGS

2SD1646 2SD1646 Power Transistor Inchange Semiconductor

2SD1646 Distributor