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2SD1646 - Power Transistor

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Part number 2SD1646
Manufacturer Inchange Semiconductor
File Size 209.53 KB
Description Power Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) High DC Current Gain : hFE= 1000(Min) @IC= 1A Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications.

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