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2SD1632 - NPN Transistor

2SD1632 Description

isc Silicon NPN Power Transistor .
Collector-Base Breakdown Voltage- : VCBO= 1300V (Min. High Switching Speed. Built-in Damper Diode. Minimum Lot-to-Lot variations fo.

2SD1632 Applications

* Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1300 V VCES Collector-Emitter Voltage 1300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector

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Datasheet Details

Part number
2SD1632
Manufacturer
INCHANGE
File Size
207.24 KB
Datasheet
2SD1632-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1632-like datasheet