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2SD1631 Silicon NPN Epitaxial Type Transistor

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Description

2SD1631 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1631 Micro Motor Drive, Hammer Drive Application.

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Applications

* Switching Applications Power Amplifier Applications Unit: mm
* High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)
* Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter volt

2SD1631 Distributors

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2SD1631 Silicon NPN Epitaxial Type Transistor Toshiba Semiconductor
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