2SD1631 Datasheet - Toshiba Semiconductor

2SD1631, Silicon NPN Epitaxial Type Transistor

2SD1631 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1631 Micro Motor Drive, Hammer Drive Application.

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2SD1631_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SD1631

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

116.58 KB

Description:

Silicon NPN Epitaxial Type Transistor

Applications

* Switching Applications Power Amplifier Applications Unit: mm
* High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)
* Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter volt

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2SD1631 Silicon NPN Epitaxial Type Transistor Toshiba Semiconductor

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