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2SD1160 Datasheet - Toshiba Semiconductor

2SD1160 NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SD1160 Switching Applications Suitable for Motor Drive Applications 2SD1160 Unit: mm High DC current gain Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) Built-in free wheel diode Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V Collector current DC .

2SD1160 Datasheet (143.22 KB)

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Datasheet Details

Part number:

2SD1160

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

143.22 KB

Description:

Npn transistor.

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2SD1160 NPN TRANSISTOR Toshiba Semiconductor

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