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2SD1160 - NPN TRANSISTOR

2SD1160 Description

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SD1160 Switching Applications Suitable for Motor Drive Applications 2SD1160 Unit: mm

2SD1160 Applications

* Suitable for Motor Drive Applications 2SD1160 Unit: mm
* High DC current gain
* Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA)
* Built-in free wheel diode Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base vol

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NPN TRANSISTOR Toshiba Semiconductor
Toshiba Semiconductor 2SD1160-like datasheet