2SD1160
Toshiba ↗ Semiconductor
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Npn transistor.
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SD1160
Switching Applications Suitable for Motor Drive Applications
2SD1160
Unit: mm
📁 Related Datasheet
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isc Silicon NPN Darlington Power Transistor
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DESCRIPTION ·High DC Current Gain-
: hFE= 400(Min.)@IC= 2A ·High Switching Speed ·Low Collector .
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Application
TV horizontal deflection output
Outline
TO-220AB
1
2 3
1. Base 2. Collector (Flange) 3..
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2SD1163 - SILICON POWER TRANSISTOR
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Silicon NPN Power Transistors
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·Wit
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DESCRIPTION h TO-220 package.
2SD1163 - Silicon NPN Transistor
(Renesas)
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
Th.
2SD1163 - NPN Silicon Epitaxial Power Transistor
(Thinki Semiconductor)
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®
Pb Free Plating Product
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2SD1163, 2SD1163A
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TV horizontal deflection output
Outline
TO-220AB
1
2 3
1. Base 2. Collector (Flange) 3..
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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector Current: IC= 7A ·Collector-Emitter Breakdown Voltage-
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