2SD1160 Datasheet - Toshiba Semiconductor

2SD1160 NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SD1160 Switching Applications Suitable for Motor Drive Applications 2SD1160 Unit: mm High DC current gain Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) Built-in free wheel diode Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V Collector current DC .

2SD1160_ToshibaSemiconductor.pdf