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2SD1165A - NPN Transistor

2SD1165A Description

SILICON NPN TRIPLE DIFFUSED MESA TYPE (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATION.DC-AC POWER INVERTER APPLICATION.MOTOR CONTROL APPLICATIO.

2SD1165A Features

* . High Voltage : CE0 (SUS) >900V . Triple Diffused Design
* Darlington Design MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Base Current Thermal Resistance (Double Side Cooling) Junction Tempe

2SD1165A Applications

* Unit in mm 2 -04.0 ±0.2 ® ©-1 (g)-2 © BASE EMITTER EMITTER COLLECTOR EIAJ TOSHIBA Weight : 150g 2-60B1A ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION Forward Current Transfer Ratio Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emi

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NPN Transistor Toshiba
Toshiba 2SD1165A-like datasheet