2SD1165A Datasheet - Toshiba

2SD1165A, NPN Transistor

SILICON NPN TRIPLE DIFFUSED MESA TYPE (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATION.DC-AC POWER INVERTER APPLICATION.MOTOR CONTROL APPLICATIO.

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2SD1165A-Toshiba.pdf

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Datasheet Details

Part number:

2SD1165A

Manufacturer:

Toshiba ↗

File Size:

124.73 KB

Description:

NPN Transistor

Features

* . High Voltage : CE0 (SUS) >900V . Triple Diffused Design
* Darlington Design MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Base Current Thermal Resistance (Double Side Cooling) Junction Tempe

Applications

* Unit in mm 2 -04.0 ±0.2 ® ©-1 (g)-2 © BASE EMITTER EMITTER COLLECTOR EIAJ TOSHIBA Weight : 150g 2-60B1A ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION Forward Current Transfer Ratio Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emi

2SD1165A Distributors

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2SD1165A NPN Transistor Toshiba

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