: . High DC Current Gain of 400 to 1200 at VCE =5V, I C =0.5A . Low VcE(sat) of 1-OV (MAX.) at Ic=lA, IB =0.02A . Collector Power Dissipation of 30V at Tc=25°C
Unit in m
✔ 2SD1052A Application
.
FEATURES : . High DC Current Gain of 400 to 1200 at VCE =5V, I C =0.5A . Low VcE(sat) of 1-OV (MAX.) at Ic
2SD1052 - NPN Transistor
(Toshiba)
2SD1052
SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS .
FEATURES : . High DC Current Gain of 250 to 75.
2SD1051 - Silicon NPN epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistor
2SD1051
Silicon NPN epitaxial planer type
For low-frequency power amplification Complementary to 2SB819
6.9±0.1 1.5 2.5±0.1 1.0
1.0 2.4±0..
2SD1055 - Medium Power Transistor
(Rohm)
Transistors
Medium Power Transistor (32V, 2A)
2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M
FFeatures 1) Low VCE(sat). VCE(sat) = 0.5V (.
2SD1056 - NPN Transistor
(Fuji Electric)
2SD1056
FUJI POWER TRANSISTOR
TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE,HIGH CURRENT,SWITCHING
Outline Drawings
Features
High D.
2SD1000 - NPN TRANSISTOR
(NEC)
.
2SD1000 - NPN Silicon Epitaxial Transistor
(Kexin)
SMD Type
NPN Silicon Epitaxial Transistor 2SD1000
Transistors
Features
World standard miniature package:SOT-89. Low collector saturation voltage.
A.
2SD1001 - NPN TRANSISTOR
(NEC)
.
2SD1001 - NPN Silicon Epitaxial Transistor
(Kexin)
SMD Type
NPN Silicon Epitaxial Transistor 2SD1001
Transistors
Features
World standard miniature package:SOT-89. High collector-emitter voltage.
Abs.
2SD1005 - NPN SILICON EPITAXIAL TRANSISTOR
(GME)
NPN SILICON EPITAXIAL TRANSISTOR
FEATURES
High Collector to Base Voltage. Excellent DC Current Gain Linearity. Complements to PNP type 2SB804.
.
2SD1005 - GENERAL PURPOSE TRANSISTOR
(HOTTECH)
REPLACEMENT TYPE : 2SD1005
FEATURES Small Flat Package High Breakdown Voltage Excellent DC Current Gain Linearity
HED1005(NPN)
GENERAL PURPOSE .
