: . High DC Current Gain of 250 to 750 at VCE=5V, I C =0.5A . Low VcE(sat) of 1.0V (MAX.) at Ic=lA, Ib=0.02A . Collector Power Dissipation of 30W at Tc=25°C
Unit in mm 1
✔ 2SD1052 Application
.
FEATURES : . High DC Current Gain of 250 to 750 at VCE=5V, I C =0.5A . Low VcE(sat) of 1.0V (MAX.) at Ic=l
2SD1052A, Toshiba
SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
2SD1052A
AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS .
FEATURES : . High DC Current Gain of 400 to 1.
2SD1056, Fuji Electric
2SD1056
FUJI POWER TRANSISTOR
TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE,HIGH CURRENT,SWITCHING
Outline Drawings
Features
High D.
2SD1000, Kexin
SMD Type
NPN Silicon Epitaxial Transistor 2SD1000
Transistors
Features
World standard miniature package:SOT-89. Low collector saturation voltage.
A.
2SD1001, Kexin
SMD Type
NPN Silicon Epitaxial Transistor 2SD1001
Transistors
Features
World standard miniature package:SOT-89. High collector-emitter voltage.
Abs.
