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NPN SILICON EPITAXIAL TRANSISTOR
FEATURES
High Collector to Base Voltage. Excellent DC Current Gain Linearity. Complements to PNP type 2SB804.
Pb
Lead-free
Production specification
2SD1005
ORDERING INFORMATION
Type No.
Marking
2SD1005
BW/BV/BU
SOT-89
Package Code SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Unit
VCBO VCEO VEBO IC PC Tj Tstg
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature
100 80 5 1 500 150 -55 to +150
V V V A mW ℃ ℃
E056 Rev.A
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2SD1005 Datasheet
