Part number:
2SD1762
Manufacturer:
GME
File Size:
271.39 KB
Description:
Power transistor.
* Low VCE(sat) VCE(sat)=0.5V(Typ)（IC/IB=2A/0.2A）
* Complements the 2SB1185. Pb Lead-free Production specification 2SD1762 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO VEBO I
2SD1762
GME
271.39 KB
Power transistor.
📁 Related Datasheet
2SD1760 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
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DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 0.5V(Typ)@ IC= 2A ·Comple.
2SD1760 - Power Transistor
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FEATURES
Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A)
Complements the 2SB1184.
APPLICATIONS
Epitaxial planar type. NPN s.
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■ Features
● Low VCE (sat) ● Complementary to 2SB1184
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30 +0.1.
2SD1761 - SILICON POWER TRANSISTOR
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Product Specification
Silicon NPN Power Transistors
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..
DESCRIPTION ·With TO-220Fa package ·Low co.
2SD1761 - Silicon NPN Power Transistors
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.) ·Wide Area of Safe Operation ·Complement to .
2SD1762 - Power Transistor
(Rohm)
Transistors
Power Transistor (50V, 3A)
2SD1760 / 2SD1864 / 2SD1762
FFeatures 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complem.
