2SD1762
GME
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Power transistor.
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2SD1760 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1760
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 0.5V(Typ)@ IC= 2A ·Comple.
2SD1760 - Power Transistor
(GME)
Power Transistor
FEATURES
Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A)
Complements the 2SB1184.
APPLICATIONS
Epitaxial planar type. NPN s.
2SD1760 - Power Transistor
(Rohm)
Power Transistor (50V, 3A)
2SD1760 / 2SD1864
Features 1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB12.
2SD1760 - NPN Epitaxial Planar Silicon Transistor
(SeCoS)
Elektronische Bauelemente
2SD1760
3A , 60V NPN Epitaxial Planar Silicon Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-.
2SD1760 - NPN Transistors
(Kexin)
SMD Type
NPN Transistors 2SD1760
Transistors
■ Features
● Low VCE (sat) ● Complementary to 2SB1184
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30 +0.1.
2SD1761 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1761
..
DESCRIPTION ·With TO-220Fa package ·Low co.
2SD1761 - Silicon NPN Power Transistors
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.) ·Wide Area of Safe Operation ·Complement to .
2SD1762 - Power Transistor
(Rohm)
Transistors
Power Transistor (50V, 3A)
2SD1760 / 2SD1864 / 2SD1762
FFeatures 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complem.
2SD1762 - NPN Transistor
(JCST)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
2SD1762 TRANSISTOR (NPN)
FEATURES z Low VCE(sat) z Compleme.
2SD1762 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min.) ·Low Collector Saturation Voltage
: VCE(sat).
