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2SD1760 - Silicon NPN Power Transistor

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Part number 2SD1760
Manufacturer Inchange Semiconductor
File Size 227.86 KB
Description Silicon NPN Power Transistor
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Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Typ)@ IC= 2A Complements the 2SB1184 Good Linearity of hFE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM

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