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2SD1706 Datasheet - Inchange Semiconductor

2SD1706 Silicon NPN Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) *Good Linearity of hFE *Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 7A *Complement to Type 2SB1155 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *De.

2SD1706_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD1706

Manufacturer:

Inchange Semiconductor

File Size:

216.00 KB

Description:

Silicon npn power transistor.

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2SD1706 2SD1706 Silicon NPN Power Transistor Inchange Semiconductor

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