Datasheet4U Logo Datasheet4U.com

2SD1706 - Silicon NPN Power Transistor

Product Overview

📥 Download Datasheet

Datasheet preview – 2SD1706

Datasheet Details

Part number 2SD1706
Manufacturer Inchange Semiconductor
File Size 216.00 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 2SD1706 Datasheet
Additional preview pages of the 2SD1706 datasheet.

Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Good Linearity of hFE Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 7A Complement to Type 2SB1155 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-B

📁 Similar Datasheet

  • 2SD1700 - NPN SILICON TRANSISTOR (NEC)
  • 2SD1701 - NPN SILICON TRANSISTOR (NEC)
  • 2SD1702 - NPN Transistor (NEC)
  • 2SD1705 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD1707 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD1710 - NPN Transistor (INCHANGE)
  • 2SD1710A - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • 2SD1710C - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
Other Datasheets by Inchange Semiconductor
Published: |