2SD1706 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor 2SD1706 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Good Linearity of hFE. Low Collector Saturation Voltage- : VCE(sat)= 0.

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Datasheet Specifications

Part number: 2SD1706
Manufacturer: Inchange Semiconductor
File Size: 216.00 KB
Datasheet: 2SD1706_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICP Collector Current-Pulse Col

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2SD1706 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD1706-like datasheet