Datasheet4U Logo Datasheet4U.com

2SD1706 - Silicon NPN Power Transistor

2SD1706 Description

isc Silicon NPN Power Transistor 2SD1706 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Good Linearity of hFE. Low Collector Saturation Voltage- : VCE(sat)= 0.

2SD1706 Applications

* Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICP Collector Current-Pulse Col

📥 Download Datasheet

Preview of 2SD1706 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SD1706
Manufacturer
Inchange Semiconductor
File Size
216.00 KB
Datasheet
2SD1706_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

📁 Related Datasheet

  • 2SD1700 - NPN SILICON TRANSISTOR (NEC)
  • 2SD1701 - NPN SILICON TRANSISTOR (NEC)
  • 2SD1702 - NPN Transistor (NEC)
  • 2SD1705 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD1707 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD1710 - NPN Transistor (INCHANGE)
  • 2SD1710A - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • 2SD1710C - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)

📌 All Tags

Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SD1706-like datasheet