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2SD1713 - Power Transistor

2SD1713 Description

isc Silicon NPN Power Transistor 2SD1713 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Good Linearity of hFE. Wide Area of Safe Operation. Complement to Type 2S.

2SD1713 Applications

* Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICP Collector Current-Puls

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Power Transistor Inchange Semiconductor
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