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2SD1713 Datasheet - Inchange Semiconductor

2SD1713 Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) *Good Linearity of hFE *Wide Area of Safe Operation *Complement to Type 2SB1158 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for high power amplifier appl.

2SD1713_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD1713

Manufacturer:

Inchange Semiconductor

File Size:

214.17 KB

Description:

Power transistor.

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2SD1713 2SD1713 Power Transistor Inchange Semiconductor

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