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2SD1713

Power Transistor

2SD1713 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min)
*Good Linearity of hFE
*Wide Area of Safe Operation
*Complement to Type 2SB1158
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for high power amplifier appl.

2SD1713 Datasheet (214.17 KB)

Preview of 2SD1713 PDF

Datasheet Details

Part number:

2SD1713

Manufacturer:

Inchange Semiconductor

File Size:

214.17 KB

Description:

Power transistor.

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2SD1713 Power Transistor Inchange Semiconductor

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