2SD1709 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor 2SD1709 .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. Built-in Damper Diode. Minimum Lot-to-Lot variations for robust de.

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Datasheet Specifications

Part number: 2SD1709
Manufacturer: Inchange Semiconductor
File Size: 215.00 KB
Datasheet: 2SD1709_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Color TV horizontal deflection output
* Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Conti

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2SD1709 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD1709-like datasheet