2SD1702
NEC
197.79kb
Npn transistor.
TAGS
📁 Related Datasheet
2SD1700 - NPN SILICON TRANSISTOR
(NEC)
..
.
2SD1701 - NPN SILICON TRANSISTOR
(NEC)
.
2SD1705 - Silicon NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SD1705
Silicon NPN epitaxial planar type
Unit: mm
(0.7)
For power switching Complementary to 2SB1154
21.0±0.5
15.0±0.3 11.0±0.2
.
2SD1705 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
2SD1705
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collecto.
2SD1706 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
2SD1706
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collecto.
2SD1707 - Silicon NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SD1707
Silicon NPN epitaxial planar type
Unit: mm
(0.7)
For power switching Complementary to 2SB1156
21.0±0.5
15.0±0.3 11.0±0.2
.
2SD1707 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
2SD1707
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collecto.
2SD1709 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
2SD1709
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Mini.
2SD1710 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot.
2SD1710 - NPN Silicon Power Transistors
(MCC)
MCC
omponents 21201 Itasca Street Chatsworth
# $
% #
Features
• High voltage, high.
Stock and price