2SD1763A Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min. Good Linearity of hFE. Complement to Type 2SB1186A. Minimum Lot-to-.

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Datasheet Specifications

Part number: 2SD1763A
Manufacturer: Inchange Semiconductor
File Size: 213.58 KB
Datasheet: 2SD1763A-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Power amplifier applications.
* Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A I

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2SD1763A Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD1763A-like datasheet